A numerical method for the determination of the transient response of semiconductor devices

Abstract

In recent years, substantial research effort has been expended on the simulation of the behaviour of semiconductor devices. Since the internal behaviour of even the simplest device is highly complex, few analytical solutions of practical value exist. Consequently, particular emphasis has been placed on numerical approaches as a means to simulate, first, terminal characteristics of interest to the circuit designer, and secondly, internal device mechanisms, the primary concern of device designers and physicists.

Citation

Griffin, P.D. and Marques, J. (1985), "A numerical method for the determination of the transient response of semiconductor devices", Engineering Computations, Vol. 2 No. 4, pp. 314-318. https://doi.org/10.1108/eb023630