STATIONARY SOLUTIONS OF HYDRODYNAMIC MODELS FOR SEMICONDUCTOR DEVICE SIMULATION

Abstract

Two hydrodynamic models of a semiconductor device are considered. The first takes into account thermal and collisional effects, while neglecting viscous terms, which are included in the second. A qualitative analysis of stationary one‐dimensional solutions is performed and a numerical comparison is presented.

Citation

MAJORANA, A. and RUSSO, G. (1993), "STATIONARY SOLUTIONS OF HYDRODYNAMIC MODELS FOR SEMICONDUCTOR DEVICE SIMULATION", COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, Vol. 12 No. 1, pp. 81-93. https://doi.org/10.1108/eb010336