NUMERICAL SIMULATION OF BIPOLAR INJECTION AND RECOMBINATION IN MNOS STRUCTURE

Abstract

In this paper we consider the effects of recombination during polarization on passing a current through SiN4 and SiO2. In the literature, some works have been devoted to the problem of the passage of a current through MNOS‐structures. However, these studies related mainly to monopolar injection or bipolar injection but ignored recombination.

Citation

GADIYAK, G.V., OBRECHT, M.S. and SINITSA, S.P. (1986), "NUMERICAL SIMULATION OF BIPOLAR INJECTION AND RECOMBINATION IN MNOS STRUCTURE", COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, Vol. 5 No. 4, pp. 227-234. https://doi.org/10.1108/eb010029