DELAUNAY PARTITIONING IN THREE DIMENSIONS AND SEMICONDUCTOR MODELS

Abstract

An algorithm for Delaunay partitioning in three dimensions is given, and its use in numerical semiconductor models is examined. In particular, tetrahedral elements are found to be compatible with the Scharfetter‐Gummel discretization of the stationary continuity equations associated with such models, using the Voronoi cross‐sections for each edge in the obtained network. For tetrahedral elements, however, the Voronoi cross‐sections do not coincide with those previously shown to be compatible with the Scharfetter‐Gummel method.

Citation

SEVER, M. (1986), "DELAUNAY PARTITIONING IN THREE DIMENSIONS AND SEMICONDUCTOR MODELS", COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, Vol. 5 No. 2, pp. 75-93. https://doi.org/10.1108/eb010019