Design of bilayer graphene nanoribbon tunnel field effect transistor
ISSN: 0305-6120
Article publication date: 9 August 2021
Issue publication date: 5 April 2023
Abstract
Purpose
The purpose of this paper is to design novel tunnel field effect transistor (TFET) using graphene nanoribbons (GNRs).
Design/methodology/approach
To design the proposed TFET, the bilayer GNRs (BLGNRs) have been used as the channel material. The BLGNR-TFET is designed in QuantumATK, depending on 2-D Poisson’s equation and non-equilibrium Green’s function (NEGF) formalism.
Findings
The performance of the proposed BLGNR-TFET is investigated in terms of current and voltage (I-V) characteristics and transconductance. Moreover, the proposed device performance is compared with the monolayer GNR-TFET (MLGNR-TFET). From the simulation results, it is investigated that the BLGNR-TFET shows high current and gain over the MLGNR-TFET.
Originality/value
This paper presents a new technique to design GNR-based TFET for future low power very large-scale integration (VLSI) devices.
Keywords
Acknowledgements
The authors would like to thank Science and Engineering Research Board (SERB), DST, Government of India, for providing the financial support under ECR/2016/001070.
Citation
Vobulapuram, R.K., Shaik, J.B., P., V., Mekala, D.P. and Lingayath, U. (2023), "Design of bilayer graphene nanoribbon tunnel field effect transistor", Circuit World, Vol. 49 No. 2, pp. 174-179. https://doi.org/10.1108/CW-05-2020-0079
Publisher
:Emerald Publishing Limited
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