To read this content please select one of the options below:

Magnetic field sensing utilizing GMR materials

Carl H. Smith (Nonvolatile Electronics, Inc., 11409 Valley View Road, Eden Prairie, MN 55344, USA. Tel: 00 1 612 829 9217; Fax: 00 1 612 996 1600; E‐mail: bobsch@home.nve.com)
Robert W. Schneider (Nonvolatile Electronics, Inc., 11409 Valley View Road, Eden Prairie, MN 55344, USA. Tel: 00 1 612 829 9217; Fax: 00 1 612 996 1600; E‐mail: bobsch@home.nve.com)

Sensor Review

ISSN: 0260-2288

Article publication date: 1 December 1998

869

Abstract

The Giant MagnetoResistance (GMR) effect, discovered in France in 1988, has already been applied in magnetic sensors and has promise in other applications. The rapid acceptance of this technology is due to GMR’s unique characteristics such as high sensitivity, good temperature stability, and excellent linearity over a wide sensing range. In this article GMR materials are described as are their application in magnetic field sensors. New GMR structures utilizing spin valves and spin dependent tunneling (SDT) will offer even more potential for expanding the horizon of solid state magnetic sensing. Comparisons are made to sensors using conventional technology. Integrated GMR sensors that have signal conditioning and output electronics monolithically integrated with the sensor offer further uses of this new technology. Beyond the sensor itself, other control system functions have the potential for using the same GMR materials to make magnetic isolators and nonvolatile memories.

Keywords

Citation

Smith, C.H. and Schneider, R.W. (1998), "Magnetic field sensing utilizing GMR materials", Sensor Review, Vol. 18 No. 4, pp. 230-236. https://doi.org/10.1108/02602289810240592

Publisher

:

MCB UP Ltd

Copyright © 1998, MCB UP Limited

Related articles