Low Temperature Co‐fired Tape Dielectric Materials System for Multilayer Interconnections

Abstract

Modern complex integrated circuits require more input/output connections and operate at faster switching speeds and higher power levels than was the case before LSI and VLSI devices. As a result, there is a need for packages with high electrical conductivity, low dielectric constant, high thermal conductivity, precise line resolution and low unit cost. Ideally, it should also be possible to include resistors and for the package to be manufactured in‐house for maximum control. Multilayer printed circuit boards, complex multilayer hybrid circuits and high temperature co‐fired ceramic packages have been used to accomplish the interconnection of complex ICs. A new technology has been developed which combines the benefits of thick film with the processing advantages of co‐fired ceramic. The thick film process begins with a bare substrate, usually 96% alumina, upon which gold, silver alloy or copper metallisation, and screen‐printable dielectric paste are applied. Processing is a series of printing and firing operations; the firing temperature is usually between 800°C and 1000°C. Interconnecting vias are typically formed by screen printing and are usually a minimum of 250 ?m (10 mil) in diameter. The high temperature co‐fired approach uses no substrate. Printing of tungsten, molybdenum or molymanganese metallisation is carried out on alumina tape dielectric. The vias are formed by mechanical punching and are typically a minimum of 200 ?m (8 mil) in diameter. A single firing is performed in a special atmosphere, usually at 1500°C. This paper describes a new materials system which consists of a tape dielectric and gold, silver and silver/palladium inner layer and via fill conductor compositions. Circuits and packages made with the system are fired in an air atmosphere in standard thick film furnaces and are compatible with other conventional thick film materials. The process for making these parts is described and critical process parameters are identified. The results of reliability testing under temperature, humidity and bias are discussed and supporting microstructural analysis is presented.

Citation

Steinberg, J.I., Horowitz, S.J. and Bacher, R.J. (1986), "Low Temperature Co‐fired Tape Dielectric Materials System for Multilayer Interconnections", Microelectronics International, Vol. 3 No. 1, pp. 36-39. https://doi.org/10.1108/eb044213